Silicon carbide (SiC) is an inorganic compound formed by high-temperature smelting of materials like quartz sand, petroleum coke (or coal tar), and wood chips (with added salt for producing green silicon carbide) in a resistance furnace.

SiC is a semiconductor that occurs naturally in the extremely rare mineral moissanite. A substrate is a clean, single-crystal wafer cut, ground, and polished along a specific crystal orientation, possessing particular crystallographic faces and suitable electrical, optical, and mechanical properties for growing epitaxial layers.

SiC substrates are key materials in the development of wide-bandgap semiconductors. Devices made from SiC can withstand high temperatures, high voltages, high frequencies, and high power, and are resistant to radiation. They offer fast switching speeds and high efficiency, significantly reducing product power consumption, improving energy conversion efficiency, and minimizing product size. SiC substrates are categorized into semi-insulating SiC substrates and conductive SiC substrates, which are used to manufacture power devices and radio frequency devices after epitaxial growth.

Companies under Shengtou Investment Group, such as Founder Microelectronics and Chongqing Silicon Valley, have achieved world-leading results in automotive-grade SiC MOS products and conductive SiC substrates, effectively addressing the raw material supply bottlenecks in key areas like new energy vehicles and 5G communications.

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